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RN2107F~RN2109F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1107F~RN1109F Unit in mm
Equivalent Circuit and Bias Resister Values
Type No. RN2107F RN2108F RN2109F
R1 (k) 10 22 47
R2 (k) 47 47 22
JEDEC EIAJ TOSHIBA Weight: 2.3 mg
Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F IC PC Tj Tstg VEBO VCBO VCEO Rating -50 -50 -6 -7 -15 -100 100 150 -55~150 mA mW C C V Unit V V
2-2HA1A
Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage
000707EAA1
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2001-02-08
1/5
RN2107F~RN2109F
Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current RN2107F ~RN2109F RN2107F Emitter cut-off current RN2108F RN2109F RN2107F DC current gain RN2108F RN2109F Collector-emitter saturation voltage RN2107F ~RN2109F RN2107F Input voltage (ON) RN2108F RN2109F RN2107F Input voltage (OFF) RN2108F RN2109F Transition frequency Collector Output capacitance RN2107F ~RN2109F RN2107F ~RN2109F RN2107F Input resistor RN2108F RN2109F RN2107F Resistor ratio RN2108F RN2109F R1/R2 R1 fT Cob VCE = -10V, IC = -5mA VCB = -10V, IE = 0, f = 1MHz VI (OFF) VCE = -5V, IC = -0.1mA VI (ON) VCE = -0.2V, IC = -5mA VCE (sat) IC = -5mA, IB = -0.25mA hFE VCE = -5V, IC = -10mA IEBO Symbol ICBO ICEO Test Circuit Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VEB = -7V, IC = 0 VEB = -15V, IC = 0 Min -0.081 -0.078 -0.167 80 80 70 -0.7 -1.0 -2.2 -0.5 -0.6 -1.5 7 15.4 32.9 0.191 0.421 1.92 Typ. -0.1 200 3 10 22 47 0.213 0.468 2.14 Max -100 -500 -0.15 -0.145 -0.311 -0.3 -1.8 -2.6 -5.8 -1.0 -1.16 -2.6 6 13 28.6 61.1 0.232 0.515 2.35 k MHz pF V V V mA Unit nA nA
2001-02-08
2/5
RN2107F~RN2109F
2001-02-08
3/5
RN2107F~RN2109F
2001-02-08
4/5
RN2107F~RN2109F
Type Name
Marking
RN2107F
RN2108F
RN2109F
2001-02-08
5/5
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